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Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects - NASA/ADS

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Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects

Abstract

We review recent work on Raman spectroscopy of graphite and graphene. We focus on the origin of the D and G peaks and the second order of the D peak. The G and 2D Raman peaks change in shape, position and relative intensity with number of graphene layers. This reflects the evolution of the electronic structure and electron-phonon interactions. We then consider the effects of doping on the Raman spectra of graphene. The Fermi energy is tuned by applying a gate-voltage. We show that this induces a stiffening of the Raman G peak for both holes and electrons doping. Thus Raman spectroscopy can be efficiently used to monitor number of layers, quality of layers, doping level and confinement.


Publication:
Solid State Communications
Pub Date:
July 2007
DOI:
10.1016/j.ssc.2007.03.052
Bibcode:
2007SSCom.143...47F
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