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Monolithic broadband GaAs F.E.T. amplifiers

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Monolithic broadband GaAs F.E.T. amplifiers Authors:
Pengelly, R. S.; Turner, J. A. Affiliation:
AA(Plessey Co., Ltd., Romsey, Hants., England), AB(Plessey Co., Ltd., Caswell, Northants., England) Publication:
Electronics Letters, vol. 12, May 13, 1976, p. 251, 252. Research supported by the Ministry of Defence (Procurement Executive) of England. Publication Date:
05/1976 Category:
Electronics and Electrical Engineering Origin:
STI NASA/STI Keywords:
Broadband Amplifiers, Field Effect Transistors, Gallium Arsenides, Integrated Circuits, Microwave Amplifiers, Amplifier Design, Chips, Electronic Modules, Equivalent Circuits, Frequency Response, Superhigh Frequencies, Transistor Amplifiers Bibliographic Code:


A unique monolithic X-band FET amplifier is described. Wideband matching circuits, using lumped elements, are integrated with the transistor on semi-insulating gallium arsenide to produce an amplifier chip 1.8 x 1.2 mm. Gains in excess of 4.5 dB over 7.5 to 11.5 GHz have been measured. The chip has been installed into a low-parasitic package to produce a gain module suitable for the microwave engineer.
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