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Three garnet compositions for bubble domain memories

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Title:
Three garnet compositions for bubble domain memories Authors:
Nielsen, J. W.; Blank, S. L.; Smith, D. H.; Vella-Coleiro, G. P.; Hagedorn, F. B.; Barns, R. L.; Biolsi, W. A. Affiliation:
AA(Bell Laboratories), AB(Bell Laboratories), AC(Bell Laboratories), AD(Bell Laboratories), AE(Bell Laboratories), AF(Bell Laboratories), AG(Bell Laboratories) Publication:
Journal of Electronic Materials, Volume 3, Issue 3, pp.693-707 Publication Date:
08/1974 Origin:
SPRINGER Keywords:
magnetic garnets, bubble domains, memories, garnet films DOI:
10.1007/BF02655293 Bibliographic Code:
1974JEMat...3..693N

Abstract

The choice of magnetic garnet compositions for bubble memories is always a compromise dictated by the material requirements generated by the specifications on the memories. The three compositions reported, Y2.62Smo.38Fe3.85Ga1.15O12, Gd2.lLuO.9Fe4.4Al0.6O12, and Yl.92Sm0.1Ca0.98Fe4.02Ge0.98O12, represent three examples of such a compromise. The first composition is excellent for use in circuits operating at 100 KHz over a temperature range of -20° to 80°C. The second has a mobility up to 5000 cm/sec/0e and is capable of very high speed operation at the sacrifice of stability toward temperature. The third exhibits excellent stability toward temperature and has operated at 1 MHz but is compositionally more complex. Melt compositions for film growth and a summary of magnetic properties are presented for the three compositions. Factors to be weighed in composition selection for bubble domain memories are discussed.
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